The luminescence of Cu^{+} and Cu^{2+} ions in CsBr:Cu and CsBr:CuBr_{2} crystals, respectively, is investigated under excitation by synchrotron radiation in the CsBr fundamental absorption range at 10 K and 300 K. The existence of the luminescence bands of different origin: (i) the intrinsic radiative transition of Cu^{+} ions in the bands peaked at 2.61 eV and 2.23 eV, (ii) the recombination luminescence of Cu^{2+} ions in the bands peaked at 2.55 eV and 2.13 eV, (iii) the luminescence of excitons localized around Cu^{+} and Cu^{2+} ions in the band peaked at 3.08 eV and 3.38 eV, respectively, was found in CsBr:Cu and CsBr:CuBr_{2} crystals. The energies of creation of exciton localized around Cu^{+} and Cu^{2+} ions (6.06 eV and 6.09 eV, respectively, at 10 K) and excitons bound with these ions (5.83 eV and 5.99 eV at 300 K) were determined as well.
In this work field-sweep electron spin echo and pulsed electron nuclear double resonance study of the silicon carbide (SiC) nanoparticles (np-SiC) of different sizes is presented. Nitrogen (N) triplet lines due to the isolated N donor state was observed in np-SiC with grain size d>100 nm. With a decrease of the particle size up to 50 nm the N triplet lines transforms into one single exchange line due to the delocalization of the donor wave function caused by the size confinement effect. Along with N donors the carbon vacancy (V_{C}) located in cubic phase was observed in np-SiC with d < 100 nm. The further decrease of the grain size to d < 50 nm leads to the appearance of the V_{C} located in hexagonal crystalline phase and carbon dangling bonds located in the carbon excess phase of np-SiC. The fact that only N donor center at "k2" quasi-cubic position substituting Si site was observed in the field-sweep electron spin echo and pulsed electron nuclear double resonance spectra of np-SiC was explained by high compensation degree of the samples and the presence of carbon excess in np-SiC. The appearance of the proton electron nuclear double resonance signal in no-SiC with d < 100 nm indicates that the hydrogen retention in np-SiC increases with decreasing of grain size.
Hydrogenation of two double donor centers in silicon - substitutional sulfur and thermal donor - is studied by electron paramagnetic resonance and electron-nuclear double resonance. For both centers the existence of a new paramagnetic S = 1/2 state identified as the neutral charge state of the double donor passivated with a single hydrogen atom is concluded. The microscopic structure of such complexes is discussed.
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