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100%
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issue 1
199-202
EN
The luminescence of Cu^{+} and Cu^{2+} ions in CsBr:Cu and CsBr:CuBr_{2} crystals, respectively, is investigated under excitation by synchrotron radiation in the CsBr fundamental absorption range at 10 K and 300 K. The existence of the luminescence bands of different origin: (i) the intrinsic radiative transition of Cu^{+} ions in the bands peaked at 2.61 eV and 2.23 eV, (ii) the recombination luminescence of Cu^{2+} ions in the bands peaked at 2.55 eV and 2.13 eV, (iii) the luminescence of excitons localized around Cu^{+} and Cu^{2+} ions in the band peaked at 3.08 eV and 3.38 eV, respectively, was found in CsBr:Cu and CsBr:CuBr_{2} crystals. The energies of creation of exciton localized around Cu^{+} and Cu^{2+} ions (6.06 eV and 6.09 eV, respectively, at 10 K) and excitons bound with these ions (5.83 eV and 5.99 eV at 300 K) were determined as well.
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Pulsed EPR and ENDOR Study of SiC Nanopowders

100%
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vol. 126
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issue 5
1063-1065
EN
In this work field-sweep electron spin echo and pulsed electron nuclear double resonance study of the silicon carbide (SiC) nanoparticles (np-SiC) of different sizes is presented. Nitrogen (N) triplet lines due to the isolated N donor state was observed in np-SiC with grain size d>100 nm. With a decrease of the particle size up to 50 nm the N triplet lines transforms into one single exchange line due to the delocalization of the donor wave function caused by the size confinement effect. Along with N donors the carbon vacancy (V_{C}) located in cubic phase was observed in np-SiC with d < 100 nm. The further decrease of the grain size to d < 50 nm leads to the appearance of the V_{C} located in hexagonal crystalline phase and carbon dangling bonds located in the carbon excess phase of np-SiC. The fact that only N donor center at "k2" quasi-cubic position substituting Si site was observed in the field-sweep electron spin echo and pulsed electron nuclear double resonance spectra of np-SiC was explained by high compensation degree of the samples and the presence of carbon excess in np-SiC. The appearance of the proton electron nuclear double resonance signal in no-SiC with d < 100 nm indicates that the hydrogen retention in np-SiC increases with decreasing of grain size.
EN
Hydrogenation of two double donor centers in silicon - substitutional sulfur and thermal donor - is studied by electron paramagnetic resonance and electron-nuclear double resonance. For both centers the existence of a new paramagnetic S = 1/2 state identified as the neutral charge state of the double donor passivated with a single hydrogen atom is concluded. The microscopic structure of such complexes is discussed.
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