Structural and Electrical Properties of SiC Grown by PVT Method in the Presence of the Cerium Vapor

• Authors: A. Avdonin , K. Racka , E. Tymicki , K. Grasza , R. Jakieła , M. Pisarek , W. Dobrowolski
• Languages of publication: EN

Abstracts

EN

The results of investigation of structural and electrical properties of bulk SiC crystals, which were grown by physical vapor transport method with different Ce impurity content added to the SiC source material, are presented. The gradual dosage of cerium from the SiC source and continuous presence of the cerium vapor over the SiC crystallization fronts during the crystal growth processes are confirmed. The cerium influences the overall concentration of structural defects. The increase of the concentration of both, donors and acceptors, and appearance of new shallow donors (15-32 meV) in 4H-SiC crystals are observed.

Keywords

EN

74.25.F-; 61.72.-y; 81.10.Bk; 61.72.uf

Discipline

• 81.10.Bk: Growth from vapor
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 74.25.F-: Transport properties
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 124
• Issue: 5
• Pages: 761-764

Dates

published

2013-11

Contributors

author

A. Avdonin

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Racka

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

E. Tymicki

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Grasza

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

R. Jakieła

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

M. Pisarek

• Institute of Physical Chemistry, PAS, M. Kasprzaka 44/52, 01-224 Warsaw, Poland

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.124.761