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  1. 26 Acta Physica Polonica A

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  4. 8 2013

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  1. 4 Turek M.

  2. 3 Akbulut H.

  3. 3 Bak-Misiuk J.

  4. 3 Cetinkaya T.

  5. 3 Cevher O.

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1
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Thermal Desorption of Helium from Defected Silicon

100%
Turek M., Droździel A., Pyszniak K., Wójtowicz A., Mączka D., Yuschkevich Y., Vaganov Y., Żuk J.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
849-852
EN
The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².
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Thermal Desorption of Krypton Implanted into Silicon

100%
Turek M., Droździel A., Wójtowicz A., Filiks J., Pyszniak K., Mączka D., Yuschkevich Y.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
249-253
EN
The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.
3
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Thermal Desorption Studies of Ar^{+} Implanted Silicon

100%
Drozdziel A., Wojtowicz A., Turek M., Pyszniak K., Maczka D., Slowinski B., Yushkevich Y., Zuk J.
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vol. 125
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issue 6
1400-1404
EN
Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy E_{i} varied in the range 85-175 keV. The release of implanted Ar in two steps was observed in the temperature range 930-1300 K: the relatively narrow peak at lower temperature ( ≈ 930 K for implantation fluence 5 × 10^{16} cm^{-2}) is due to the release of Ar from the agglomerations (bubbles) while the broader peak observed for higher temperatures ( ≈ 950 K for implantation fluence 5 × 10^{16} cm^{-2}) comes from Ar atoms diffusing out of the sample. Inverse order of peaks is observed compared to the results for lower energy implantations (< 50 keV). Analyzing the thermal desorption spectra collected for different heating ramp rates enabled estimation of the desorption activation energy (2 eV for E_{i} = 85 keV and 1.7 eV for E_{i} = 115 keV).
4
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Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface

100%
Frantskevich N., Fedotov A., Frantskevich A., Mazanik N.
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vol. 125
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issue 6
1332-1334
EN
The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 cm^{-1} corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 cm^{-1} and simultaneous disappearance of 4158 cm^{-1} line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 cm^{-1}, which can be associated with molecular hydrogen.
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Influence of Annealing on the Electrical Properties οf Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment

100%
Fedotov A., Korolik O., Mazanik A., Kołtunowicz T., Żukowski P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
108-110
EN
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
6
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Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment

100%
Frantskevich N., Mazanik A., Frantskevich A., Kołtunowicz T., Żukowski P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
105-107
EN
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
7
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Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes

80%
Billewicz P., Węgierek P., Grudniewski T., Turek M.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
274-277
EN
The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne⁺ ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.
8
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Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method

80%
Dussan A., Schmidt J., Koropecki R.
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vol. 125
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issue 2
174-176
EN
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane (SiH_4) diluted in hydrogen, and diborane (B_2H_6) as a dopant gas. The concentration of B_2H_6 in SiH_4 was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the μ_{n}τ_{n} product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.
9
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Fabrication of Si_{1-x}Ge_x Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

80%
Gao K., Prucnal S., Mücklich A., Skorupa W., Zhou S.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
858-861
EN
In our contribution we present the fabrication of Si_{1-x}Ge_x alloy by ion-implantation and millisecond flash lamp annealing. The 100 keV Ge ions at the fluence of 10×10^{16}, 5×10^{16}, and 3×10^{16} cm^{-2} were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the Si_{1-x}Ge_x alloying were accomplished by flash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline Si_{1-x}Ge_x layer was confirmed by the μ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The μ-Raman spectra reveal three phonon modes located at around 293, 404, and 432 cm^{-1} corresponding to the Ge-Ge, Si-Ge and Si-Si in the Si_{1-x}Ge_x alloy vibrational modes, respectively. Due to much higher carrier mobility in the Si_{1-x}Ge_x layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.
10
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Surface Properties of Me/Si Structures Prepared by Means of Self-Ion Assisted Deposition

80%
Tashlykov I., Żukowski P., Mikhalkovich O., Baraishuk S.
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vol. 125
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issue 6
1306-1309
EN
In this paper a composite structure, topography, wettability and nanohardness of a (100) Si surface modified by means of ion-assisted deposition of metal (Me) coatings in conditions of a self-irradiation are discussed.
11
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Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals

80%
Friedrich J., Stockmeier L., Müller G.
Acta Physica Polonica A
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2013
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vol. 124
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issue 2
219-226
EN
This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped (>10^{20} atoms/cm^3) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.
12
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Vacancy-Fluorine Clusters in Silicon

80%
Chroneos A., Vovk R., Goulatis I., Nazyrov Z., Pinto Simoes V., Januszczyk M., Latosińska J.
Acta Physica Polonica A
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2011
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vol. 119
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issue 6
774-777
EN
Fluorine (F) doping and the formation of F-vacancy (F_{n}V_{m}) clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of F_{n}V_{m} clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of F_{n}V_{m} clusters and V_{n} clusters. The significant binding energies of the V _{n} clusters reveals that the concentration of the large F_{n}V_{m} clusters (n ≥4, m ≥1) will be limited compared to the V_{n} clusters or even smaller clusters.
13
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Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered by Boron Oxide

80%
Taishi T., Yonenaga I., Hoshikawa K.
Acta Physica Polonica A
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2013
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vol. 124
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issue 2
231-234
EN
In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very difficult because of the segregation coefficient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B_2O_3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.
14
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Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires

80%
Peelaers H., Partoens B., Peeters F.
Acta Physica Polonica A
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2012
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vol. 122
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issue 2
294-298
EN
The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.
15
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Spin-Polarized and Normal Hopping Magnetoresistance in Heavily Doped Silicon

80%
Fedotov A., Prischepa S., Danilyuk A., Svito I., Zukowski P.
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vol. 125
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issue 6
1271-1275
EN
Investigation of electrical resistivity ρ and magnetoresistance in single crystalline n-type silicon heavily doped with antimony in the temperature range ΔT=5-300 K and at the magnetic inductance B up to 8 T was performed. It was established that, for the temperature range ΔT=25-300 K the conductivity is of activation type, while for ΔT=5-25 K it is of variable range hopping and is described by the Mott law. Parameters of the Mott hopping were calculated. It was shown that, to explain the experimental data, the spin polarized hopping via the occupied states has to be taken into account. The obtained parameters revealed that for the low temperature range ΔT=5-11 K the spin polarized hopping dominates, while for ΔT=11-20 K the spin polarized transport is accompanied by the wave function contraction.
16
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Structural and Electrical Properties of SiC Grown by PVT Method in the Presence of the Cerium Vapor

80%
Avdonin A., Racka K., Tymicki E., Grasza K., Jakieła R., Pisarek M., Dobrowolski W.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
761-764
EN
The results of investigation of structural and electrical properties of bulk SiC crystals, which were grown by physical vapor transport method with different Ce impurity content added to the SiC source material, are presented. The gradual dosage of cerium from the SiC source and continuous presence of the cerium vapor over the SiC crystallization fronts during the crystal growth processes are confirmed. The cerium influences the overall concentration of structural defects. The increase of the concentration of both, donors and acceptors, and appearance of new shallow donors (15-32 meV) in 4H-SiC crystals are observed.
17
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Preparation and Characterisation of Silicon/Carbon Nanotube Composite Electrodes for Li-Ion Battery Systems

80%
Cetinkaya T., Tocoglu U., Cevher O., Guler M., Akbulut H.
Acta Physica Polonica A
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2013
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vol. 123
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issue 2
398-400
EN
Silicon powders and different amounts of multiwalled carbon nanotube were mechanically alloyed in polyacrynitrile solution via high speed planetary ball milling. Produced composite was characterised via X-ray diffraction pattern, scanning electron microscopy, energy dispersive spectroscopy and thermogravimetric analysis.
18
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Nanostructured Silicon Thin Film Electrodes for Li-Ion Batteries

80%
Tocoglu U., Cetinkaya T., Cevher O., Oguz Guler M., Akbulut H.
Acta Physica Polonica A
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2013
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vol. 123
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issue 2
380-382
EN
In this study we produced nanostructured silicon thin films as lithium ion battery electrodes. Films were sputtered onto stainless steel substrates from high purity silicon target via dc magnetron sputtering technique with using different powers. Morphology and crystal structure of films were characterized with the use of scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy analysis, respectively. The thickness of films was measured by using surface profiler. Coin type test cells were assembled in argon filled glove box. Electrochemical performance of cells was tested on an electrochemical analyzer using constant current densities over a voltage range of 0.2-2 V.
19
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Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

71%
Misiuk A., Wierzchowski W., Wieteska K., Londos C., Andrianakis A., Bak-Misiuk J., Yang D., Surma B.
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issue 2
344-347
EN
Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
20
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Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

71%
Misiuk A., Wierzchowski W., Wieteska K., Barcz A., Bak-Misiuk J., Chow L., Vanfleet R., Prujszczyk M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
196-199
EN
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V^{+} doses, D = (1-5) × 10^{15} cm^{-2}, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi_2 are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V^{+} and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
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