Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with H^{+} Ions

• Authors: P. Żukowski , P. Węgierek , P. Billewicz , T. Kołtunowicz , F. Komarov
• Languages of publication: EN

Abstracts

EN

The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H^{+} ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ (T_{p}, f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ (T_{p}, f) have also been discussed.

Keywords

EN

61.72.uj; 61.72.Cc; 72.80.Ey

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.72.uj: III-V and II-VI semiconductors
• 72.80.Ey: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 125-128

Dates

published

2011-07

Contributors

author

P. Żukowski

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Billewicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

T. Kołtunowicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

F. Komarov

• Belarussian State University, Minsk, Belarus

References

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• 2. M. Kowalski, J. Partyka, P. Węgierek, P. Żukowski, F.F. Komarov, A.V. Jurchenko, D. Freik, Vacuum 78, 311 (2005)
• 3. P. Żukowski, M. Kowalski, J. Partyka, P. Węgierek, T. Kołtunowicz, F.F. Komarov, A.S. Kamyshan, A.M. Mironov, A.V. Jurchenko, in: X Int. Conf. Physics and Technology of Thin Films, Iwano-Frankowsk, 2005, p. 181
• 4. P. Węgierek, P. Żukowski, T. Kołtunowicz, J. Partyka, F.F. Komarov, A.V. Jurchenko, in: The 6th Int. Conf. 'Interaction of Radiation with Solids', Minsk 2005, p. 92
• 5. P. Żukowski, T. Kołtunowicz, J. Partyka, P. Węgierek, F.F. Komarov, A.M. Mironov, N. Butkievith, D. Freik, Vacuum 81, 1137 (2007)
• 6. P. Żukowski, T. Kołtunowicz, J. Partyka, P. Węgierek, M. Kolasik, A.V. Larkin, J.A. Fedotova, A.K. Fedotov, F.F. Komarov, L.A. Vlasukova, Przegląd Elektrotechniczny 84, 247 (2008) (in Polish)
• 7. N.F. Mott, E.A. Davis, Electronic Process in Non-Crystalline Materials, Clarendon Press, Oxford 1979

Identifiers

DOI

10.12693/APhysPolA.120.125