Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne^{++} Neon Ions

• Authors: P. Węgierek , P. Billewicz
• Languages of publication: EN

Abstracts

EN

The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne^{++} neon ions. An analysis of electrical properties recorded at the annealing temperature of T_{a} = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

Keywords

EN

61.72.uj; 61.72.Cc; 72.80.Ey

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.72.uj: III-V and II-VI semiconductors
• 72.80.Ey: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 122-124

Dates

published

2011-07

Contributors

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Billewicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

References

• 1. P. Żukowski, J. Partyka, P. Węgierek, Phys. Status Solidi A 159, 509 (1997)
• 2. J. Partyka, P. Żukowski, P. Węgierek, A. Rodzik, Y. Sidorenko, Y. Szostak, Semiconductors 36, 1326 (2002)
• 3. R.C. Newman, D.N.J. Totterdell, J. Phys. C., Solid State Phys. 8, 3944 (1975)
• 4. N.F. Mott, E.A. Davis, Electronic Process in Non-Crystalline Materials, Clarendon Press, Oxford 1979
• 5. P. Żukowski, T. Kołtunowicz, J. Partyka, P. Węgierek, M. Kolasik, A.V. Larkin, J.A. Fedotova, A.K. Fedotov, F.F. Komarov, L. Vlasukova, Przegląd Elektrotechniczny 3, 247 (2008) (in Polish)

Identifiers

DOI

10.12693/APhysPolA.120.122