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1998 | 94 | 3 | 526-530
Article title

Interface Effects in the Model of δ-Potential for 2D Semiconductor Quantum Structures

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EN
Abstracts
EN
Here we show that the enhancement of exchange field at the nonmagnetic- semimagnetic semiconductor interface can be described by δ-localized exchange field. In this model, the wave functions of electron confined in quantum well with semimagnetic barriers can be found analytically for an arbitrary orientation of magnetic field B with respect to growth axis C. Two cases corresponding to B∥C and B⊥C are considered. The comparison of present approach with experimental data shows that the proposed method is an efficient tool for interface investigation in 2D quantum structures.
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  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine Prospect Nauki 45, Kiev 252650, Ukraine
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv94z334kz
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