Interface Effects in the Model of δ-Potential for 2D Semiconductor Quantum Structures

• Authors: Yu. Semenov
• Languages of publication: EN

Abstracts

EN

Here we show that the enhancement of exchange field at the nonmagnetic- semimagnetic semiconductor interface can be described by δ-localized exchange field. In this model, the wave functions of electron confined in quantum well with semimagnetic barriers can be found analytically for an arbitrary orientation of magnetic field B with respect to growth axis C. Two cases corresponding to B∥C and B⊥C are considered. The comparison of present approach with experimental data shows that the proposed method is an efficient tool for interface investigation in 2D quantum structures.

Keywords

EN

73.20.Dx; 78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 526-530

Dates

published

1998-09

Contributors

author

Yu. Semenov

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine Prospect Nauki 45, Kiev 252650, Ukraine

Identifiers

DOI

10.12693/APhysPolA.94.526