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1997 | 92 | 4 | 819-823
Article title

Ohmic Contacts To GaN by Solid-Phase Regrowth

Content
Title variants
Languages of publication
EN
Abstracts
EN
Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10^{-3} Ωcm^{2} and ≈1×10^{-2} Ωcm^{2} to GaN:Si (n ≈ 2×10^{17} cm^{-3}) and GaN:Mg (p ≈ 3×10^{17} cm^{-3}). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.
Keywords
EN
Publisher

Year
Volume
92
Issue
4
Pages
819-823
Physical description
Dates
published
1997-10
Contributors
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Soltan Institute for Nuclear Studies, Hoża 69, 00-681 Warszawa, Poland
author
  • Materials Science and Engineering, North Carolina State University, NC 27695-7907, USA
author
  • Materials Science and Engineering, North Carolina State University, NC 27695-7907, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z439kz
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