Ohmic Contacts To GaN by Solid-Phase Regrowth

• Authors: E. Kamińska , A. Piotrowska , A. Barcz , L. Ilka , M. Guziewicz , S. Kasjaniuk , E. Dynowska , S. Kwiatkowski , M.D. Bremser , R.F. Davis
• Languages of publication: EN

Abstracts

EN

Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10^{-3} Ωcm^{2} and ≈1×10^{-2} Ωcm^{2} to GaN:Si (n ≈ 2×10^{17} cm^{-3}) and GaN:Mg (p ≈ 3×10^{17} cm^{-3}). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.

Keywords

EN

73.40.Ns; 73.40.Cg

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 819-823

Dates

published

1997-10

Contributors

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Barcz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

L. Ilka

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Guziewicz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Kasjaniuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Dynowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Kwiatkowski

• Soltan Institute for Nuclear Studies, Hoża 69, 00-681 Warszawa, Poland

author

M.D. Bremser

• Materials Science and Engineering, North Carolina State University, NC 27695-7907, USA

author

R.F. Davis

• Materials Science and Engineering, North Carolina State University, NC 27695-7907, USA