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1997 | 92 | 4 | 753-756
Article title

Infrared Absorption in Si-Si_{1-x}Ge_{x}-Si Quantum Wells

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EN
Abstracts
EN
We use the eight-band k·p model to describe the infrared inter-subband absorption in Si-Si_{1-x}Ge_{x}-Si quantum wells, which takes explicitly into account the Γ'_{25}(Γ_{8}^{+}+Γ_{7}^{+} in the double group) valence band and the second conduction band Γ'_{2}(Γ_{7}ˉ). We then obtain an accurate description of mixing of the S wave function with the valence band functions.
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Contributors
author
  • Laboratoire de Spectrométrie Physique, UMR 5588, UJF Grenoble 1-CNRS, BP87, 38402 Saint Martin d'Hères Cedex, France
  • Institute of Physics UMK, Grudziądzka 5, 87-100 Toruń, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z423kz
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