Infrared Absorption in Si-Si_{1-x}Ge_{x}-Si Quantum Wells

• Authors: G. Fishman , R. Oszwałdowski
• Languages of publication: EN

Abstracts

EN

We use the eight-band k·p model to describe the infrared inter-subband absorption in Si-Si_{1-x}Ge_{x}-Si quantum wells, which takes explicitly into account the Γ'_{25}(Γ_{8}^{+}+Γ_{7}^{+} in the double group) valence band and the second conduction band Γ'_{2}(Γ_{7}ˉ). We then obtain an accurate description of mixing of the S wave function with the valence band functions.

Keywords

EN

73.20.Dx; 78.66.-w; 85.30.Vw

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 4
• Pages: 753-756

Dates

published

1997-10

Contributors

author

G. Fishman

• Laboratoire de Spectrométrie Physique, UMR 5588, UJF Grenoble 1-CNRS, BP87, 38402 Saint Martin d'Hères Cedex, France

author

R. Oszwałdowski

• Institute of Physics UMK, Grudziądzka 5, 87-100 Toruń, Poland

Identifiers

DOI

10.12693/APhysPolA.92.753