Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
The charge build-up and its changes in the amorphous SiO_{2} layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO_{2} traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.
Journal
Year
Volume
Issue
Pages
585-590
Physical description
Dates
published
1997-09
received
1997-05-14
(unknown)
1997-07-09
Contributors
author
- Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
author
- Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z313kz