PL EN


Preferences help
enabled [disable] Abstract
Number of results
1997 | 92 | 3 | 585-590
Article title

SiO_{2} Layer Charge State Variation in Fowler-Nordheim Tunneling Regime

Content
Title variants
Languages of publication
EN
Abstracts
EN
The charge build-up and its changes in the amorphous SiO_{2} layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO_{2} traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.
Keywords
EN
Year
Volume
92
Issue
3
Pages
585-590
Physical description
Dates
published
1997-09
received
1997-05-14
(unknown)
1997-07-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv92z313kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.