SiO_{2} Layer Charge State Variation in Fowler-Nordheim Tunneling Regime

• Authors: I. Strzałkowski , M. Kowalski
• Languages of publication: EN

Abstracts

EN

The charge build-up and its changes in the amorphous SiO_{2} layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO_{2} traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.

Keywords

EN

72.20.Jv; 73.40.Qv

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 92
• Issue: 3
• Pages: 585-590

Dates

published

1997-09

received

1997-05-14

(unknown)

1997-07-09

Contributors

author

I. Strzałkowski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

M. Kowalski

• Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland