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Abstracts
GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.
Journal
Year
Volume
Issue
Pages
997-1002
Physical description
Dates
published
1997-05
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute for Physics of Semiconductors, National Academy of Sciences, Kiev, Ukraine
author
- State University of Technology, 290648 Lviv, Ukraine
author
- European Synchrotron Radiation Facility, 38043 Grenoble, France
author
- European Synchrotron Radiation Facility, 38043 Grenoble, France
author
- Institute of Low Temperatures and Structural Research, Okólna 2, Wrocław, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z527kz