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1997 | 91 | 5 | 997-1002
Article title

X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

Content
Title variants
Languages of publication
EN
Abstracts
EN
GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.
Keywords
EN
Year
Volume
91
Issue
5
Pages
997-1002
Physical description
Dates
published
1997-05
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z527kz
Identifiers
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