X-Ray Characterization of GaAs:Zn Gas-transport Grown Whiskers Using Conventional and Synchrotron Sources

• Authors: W. Paszkowicz , J. Górecka , J. Domagała , N. Dmitruk , S.S. Varshava , J. Härtwig , M. Ohler , A. Pietraszko
• Languages of publication: EN

Abstracts

EN

GaAs:Zn whiskers grown by the gas-transport method are characterized by diffraction methods using white and monochromatic radiation. The methods applied include the white-beam topography at ESRF synchrotron source and Laue patterns, 4-circle Bond diffractometry and high-resolution diffractometry at conventional X-ray sources. The results obtained concern the growth morphology and defect structure. It is found that GaAs:Zn whiskers grown by the described method have the form of long needles and blades of the morphologies represented by growth direction and largest lateral face ⟨112⟩{111} and ⟨111⟩{112}, respectively, with a single exception of a blade of uncommon morphology ⟨111⟩{110}.

Keywords

EN

61.72.Dd; 68.70.+w

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 5
• Pages: 997-1002

Dates

published

1997-05

Contributors

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Górecka

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

N. Dmitruk

• Institute for Physics of Semiconductors, National Academy of Sciences, Kiev, Ukraine

author

S.S. Varshava

• State University of Technology, 290648 Lviv, Ukraine

author

J. Härtwig

• European Synchrotron Radiation Facility, 38043 Grenoble, France

author

M. Ohler

• European Synchrotron Radiation Facility, 38043 Grenoble, France

author

A. Pietraszko

• Institute of Low Temperatures and Structural Research, Okólna 2, Wrocław, Poland