PL EN


Preferences help
enabled [disable] Abstract
Number of results
1997 | 91 | 2 | 289-292
Article title

On Anomalous Dependence of Current Carrier concentration on Thickness in Thin Bismuth Films

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
Using a simple model of thin film a dependence of the current carrier concentration N on thickness L in thin bismuth films is calculated in the conditions of the quantum size effect. Applying the parametrized form of the thin film potential it is shown that the experimentally determined anomalous dependence N(L) can be obtained theoretically, assuming the standard boundary conditions in contrast to the results reported in literature. It is proved that the very structure of the hole energy spectrum is responsible for the anomalous character of the N(L) dependence.
Keywords
EN
Year
Volume
91
Issue
2
Pages
289-292
Physical description
Dates
published
1997-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv91z212kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.