On Anomalous Dependence of Current Carrier concentration on Thickness in Thin Bismuth Films
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Using a simple model of thin film a dependence of the current carrier concentration N on thickness L in thin bismuth films is calculated in the conditions of the quantum size effect. Applying the parametrized form of the thin film potential it is shown that the experimentally determined anomalous dependence N(L) can be obtained theoretically, assuming the standard boundary conditions in contrast to the results reported in literature. It is proved that the very structure of the hole energy spectrum is responsible for the anomalous character of the N(L) dependence.
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