On Anomalous Dependence of Current Carrier concentration on Thickness in Thin Bismuth Films

• Authors: G. Musiał
• Languages of publication: EN

Abstracts

EN

Using a simple model of thin film a dependence of the current carrier concentration N on thickness L in thin bismuth films is calculated in the conditions of the quantum size effect. Applying the parametrized form of the thin film potential it is shown that the experimentally determined anomalous dependence N(L) can be obtained theoretically, assuming the standard boundary conditions in contrast to the results reported in literature. It is proved that the very structure of the hole energy spectrum is responsible for the anomalous character of the N(L) dependence.

Keywords

EN

73.20.-r

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1997
• Volume: 91
• Issue: 2
• Pages: 289-292

Dates

published

1997-02

Contributors

author

G. Musiał

• Institute of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland