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1996 | 90 | 5 | 1080-1084

Article title

Te Shallow Donor Solubility Mechanism in GaAs

Content

Title variants

Languages of publication

EN

Abstracts

EN
Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.

Keywords

EN

Year

Volume

90

Issue

5

Pages

1080-1084

Physical description

Dates

published
1996-11

Contributors

  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv90z551kz
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