Te Shallow Donor Solubility Mechanism in GaAs

• Authors: T. Słupiński , E. Zielińska-Rohozińska , T. Harasimowicz
• Languages of publication: EN

Abstracts

EN

Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.

Keywords

EN

64.75.+g; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 1080-1084

Dates

published

1996-11

Contributors

author

T. Słupiński

• Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

E. Zielińska-Rohozińska

• Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

T. Harasimowicz

• Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.1080