PL EN


Preferences help
enabled [disable] Abstract
Number of results
1996 | 90 | 5 | 1080-1084
Article title

Te Shallow Donor Solubility Mechanism in GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Results of thermal annealing of extremely highly doped GaAs:Te on room temperature Hall electron concentration and diffuse X-ray scattering are briefly reported. Reversible decrease/increase in electron concentration vs. temperature of annealing perfectly coincides with a strong increase/decrease in diffuse X-ray scattering intensity. An analysis of X-ray results indicates an arising of correlations in impurity positions in crystal lattice points in GaAs:Te solid solution for very high doping level. We give a sketch of a new formal model of tight bond creation between impurity atoms, which can consistently describe our results. The model is free from difficulties in describing annealing results encountered by a widely spread model of charge compensation by native acceptors.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
1080-1084
Physical description
Dates
published
1996-11
Contributors
  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
  • Inst. of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z551kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.