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1996 | 90 | 5 | 965-968
Article title

Photoreflectance Measurements of InGaAs/GaAs Quantum Wells

Content
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Languages of publication
EN
Abstracts
EN
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
Keywords
EN
Publisher

Year
Volume
90
Issue
5
Pages
965-968
Physical description
Dates
published
1996-11
Contributors
  • Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z526kz
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