Photoreflectance Measurements of InGaAs/GaAs Quantum Wells

• Authors: T. Tomaszewicz , K. Korona , R. Bożek , J. Baranowski
• Languages of publication: EN

Abstracts

EN

Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.

Keywords

EN

68.55.Bd; 73.20.Dx; 78.66.Fd

Discipline

• 78.66.Fd: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 965-968

Dates

published

1996-11

Contributors

author

T. Tomaszewicz

• Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

K. Korona

• Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

R. Bożek

• Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Baranowski

• Institute of Exper. Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.90.965