PL EN


Preferences help
enabled [disable] Abstract
Number of results
1996 | 90 | 5 | 955-958
Article title

Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire

Content
Title variants
Languages of publication
EN
Abstracts
EN
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Keywords
EN
Year
Volume
90
Issue
5
Pages
955-958
Physical description
Dates
published
1996-11
Contributors
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z524kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.