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Abstracts
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Journal
Year
Volume
Issue
Pages
955-958
Physical description
Dates
published
1996-11
Contributors
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z524kz