Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire

• Authors: A. Śliwiński , K. Korona , K. Pakuła , J. Baranowski
• Languages of publication: EN

Abstracts

EN

The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.

Keywords

EN

71.55.Eq; 73.61.Ey

Discipline

• 71.55.Eq: III-V semiconductors
• 73.61.Ey: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 90
• Issue: 5
• Pages: 955-958

Dates

published

1996-11

Contributors

author

A. Śliwiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Korona

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

K. Pakuła

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.90.955