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1996 | 90 | 4 | 681-690
Article title

Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra

Content
Title variants
Languages of publication
EN
Abstracts
EN
Recent photoluminescence results obtained for homoepitaxial GaN layers are presented. Dominant photoluminescence structures observed for these layers can be assigned to excitons bound to neutral impurities. Different methods such as temperature dependent evolution, high magnetic field and time resolved spectroscopy have been used to study the exciton line properties. For the p-type samples sharp lines are observed, assigned to the donor-acceptor recombination for differently distant pairs. The analysis of the optical transitions related to donors and acceptors is in reasonable agreement with the effective mass approximation. Electron phonon interaction was found to strongly affect the optical properties of GaN. The dominant intrinsic defect has been identified as a donor located at a nitrogen site.
Keywords
EN
Publisher

Year
Volume
90
Issue
4
Pages
681-690
Physical description
Dates
published
1996-10
Contributors
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z408kz
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