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Number of results
1996 | 90 | 4 | 681-690

Article title

Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra

Content

Title variants

Languages of publication

EN

Abstracts

EN
Recent photoluminescence results obtained for homoepitaxial GaN layers are presented. Dominant photoluminescence structures observed for these layers can be assigned to excitons bound to neutral impurities. Different methods such as temperature dependent evolution, high magnetic field and time resolved spectroscopy have been used to study the exciton line properties. For the p-type samples sharp lines are observed, assigned to the donor-acceptor recombination for differently distant pairs. The analysis of the optical transitions related to donors and acceptors is in reasonable agreement with the effective mass approximation. Electron phonon interaction was found to strongly affect the optical properties of GaN. The dominant intrinsic defect has been identified as a donor located at a nitrogen site.

Keywords

EN

Year

Volume

90

Issue

4

Pages

681-690

Physical description

Dates

published
1996-10

Contributors

  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv90z408kz
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