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1996 | 89 | 3 | 395-400
Article title

Lattice Deformation Studies in Silicon Implanted with High-Energy Protons

Content
Title variants
Languages of publication
EN
Abstracts
EN
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Keywords
EN
Year
Volume
89
Issue
3
Pages
395-400
Physical description
Dates
published
1996-03
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv89z317kz
Identifiers
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