Lattice Deformation Studies in Silicon Implanted with High-Energy Protons

• Authors: K. Wieteska , K. Dłużewska , W. Wierzchowski
• Languages of publication: EN

Abstracts

EN

The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.

Keywords

EN

61.10.-i; 61.80.-x

Discipline

• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 89
• Issue: 3
• Pages: 395-400

Dates

published

1996-03

Contributors

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

K. Dłużewska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.89.395