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1995 | 88 | 4 | 723-726
Article title

Calculations of Native Defects and Impurities in Cubic GaN Including High Pressure Effects

Content
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Languages of publication
EN
Abstracts
EN
Using the Green-function matrix technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we perform self-consist­ent calculations of the electronic structure for native defects and impurities in cubic GaN. Native defects as N and Ga vacancies and antisites and substi­tutional impurities: Zn, C and Ge in different charge states are investigated. Resulting positions of the defect levels are compared with tight-binding and pseudopotential calculations. High pressure behavior is also studied in com­parison with some other theoretical and experimental data.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
723-726
Physical description
Dates
published
1995-10
Contributors
author
  • High Pressure Research Center PAN, Sokołowska 29, 01-142 Warszawa, Poland
author
  • Institute of Physics, Aarhus University, 8000 Aarhus C, Denmark
  • Institute of Physics, Aarhus University, 8000 Aarhus C, Denmark
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z426kz
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