Calculations of Native Defects and Impurities in Cubic GaN Including High Pressure Effects

• Authors: I. Gorczyca , A. Svane , Ν.E. Christensen
• Languages of publication: EN

Abstracts

EN

Using the Green-function matrix technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we perform self-consist­ent calculations of the electronic structure for native defects and impurities in cubic GaN. Native defects as N and Ga vacancies and antisites and substi­tutional impurities: Zn, C and Ge in different charge states are investigated. Resulting positions of the defect levels are compared with tight-binding and pseudopotential calculations. High pressure behavior is also studied in com­parison with some other theoretical and experimental data.

Keywords

EN

73.61.Ey; 71.55.Eq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 723-726

Dates

published

1995-10

Contributors

author

I. Gorczyca

• High Pressure Research Center PAN, Sokołowska 29, 01-142 Warszawa, Poland

author

A. Svane

• Institute of Physics, Aarhus University, 8000 Aarhus C, Denmark

author

Ν.E. Christensen

• Institute of Physics, Aarhus University, 8000 Aarhus C, Denmark