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1995 | 87 | 2 | 543-546
Article title

Defect Levels in Gallium Arsenide after Irradiation with Light Ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
Deep level centers in GaAs implanted with light ions (H^{+}, He^{+}) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling di­rectly after the implantation process and after annealing at various tempera­tures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps effi­ciently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.
Keywords
EN
Year
Volume
87
Issue
2
Pages
543-546
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z258kz
Identifiers
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