Defect Levels in Gallium Arsenide after Irradiation with Light Ions

• Authors: T. Schmidt , L. Palmetshofer , K. Lübke
• Languages of publication: EN

Abstracts

EN

Deep level centers in GaAs implanted with light ions (H^{+}, He^{+}) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling di­rectly after the implantation process and after annealing at various tempera­tures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps effi­ciently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.

Keywords

EN

68.55.Ln

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 543-546

Dates

published

1995-02

Contributors

author

T. Schmidt

• Abteilung Festkörperphysik, Johannes-Kepler-Universität Linz, 4045 Linz, Austria

author

L. Palmetshofer

• Abteilung Festkörperphysik, Johannes-Kepler-Universität Linz, 4045 Linz, Austria

author

K. Lübke

• Institut fur Mikroelektronik, Johannes-Kepler-Universität, 4045 Linz, Austria