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1993 | 84 | 4 | 765-768
Article title

35×4 Substates of DX Centers in AlGaAs:Si

Content
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Languages of publication
EN
Abstracts
EN
The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E_{B} for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.
Keywords
EN
Publisher

Year
Volume
84
Issue
4
Pages
765-768
Physical description
Dates
published
1993-10
Contributors
author
  • Abteilung Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Abteilung Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv84z438kz
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