35×4 Substates of DX Centers in AlGaAs:Si

• Authors: G. Ostermayer , G. Brunthaler , G. Stöger , W. Jantsch , Z. Wilamowski
• Languages of publication: EN

Abstracts

EN

The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E_{B} for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.

Keywords

EN

71.55.Eq; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 765-768

Dates

published

1993-10

Contributors

author

G. Ostermayer

• Abteilung Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

G. Brunthaler

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

G. Stöger

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

W. Jantsch

• Abteilung Festkörperphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

Z. Wilamowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.765