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1993 | 83 | 1 | 51-58
Article title

Energy Levels and Electrical Activity of Dislocation Electron States in GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Experimental results are presented confirming that the two energy levels in GaAs: E_{c} - 0.68 eV and E_{v} + 0.37 eV, discovered in plastically deformed crystals, belong actually to dislocations. In view of recent identification of the electron state of misfit dislocations at an InGaAs/GaAs interface, a correspondence between these levels and dislocation types has been reinterpreted. The first mentioned leve1 belongs likely to α while the second one to β dislocations of 60° (glide set) type. Such a correspondence is compatible with the observed effect of irradiation on dislocation glide motion in GaAs. It is also argued that these energy levels are involved in the phenomenon of unquenchability of the EL2 defects placed in high-stress regions near dislocations.
Keywords
EN
Year
Volume
83
Issue
1
Pages
51-58
Physical description
Dates
published
1993-01
received
1992-08-03
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv83z105kz
Identifiers
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