Energy Levels and Electrical Activity of Dislocation Electron States in GaAs

• Authors: T. Wosiński , T. Figielski
• Languages of publication: EN

Abstracts

EN

Experimental results are presented confirming that the two energy levels in GaAs: E_{c} - 0.68 eV and E_{v} + 0.37 eV, discovered in plastically deformed crystals, belong actually to dislocations. In view of recent identification of the electron state of misfit dislocations at an InGaAs/GaAs interface, a correspondence between these levels and dislocation types has been reinterpreted. The first mentioned leve1 belongs likely to α while the second one to β dislocations of 60° (glide set) type. Such a correspondence is compatible with the observed effect of irradiation on dislocation glide motion in GaAs. It is also argued that these energy levels are involved in the phenomenon of unquenchability of the EL2 defects placed in high-stress regions near dislocations.

Keywords

EN

61.70.-r; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 83
• Issue: 1
• Pages: 51-58

Dates

published

1993-01

received

1992-08-03

Contributors

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Figielski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.83.51