PL EN


Preferences help
enabled [disable] Abstract
Number of results
1991 | 80 | 2 | 161-170
Article title

Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

Content
Title variants
Languages of publication
EN
Abstracts
EN
The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, optically detected ENDOR and double ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.
Keywords
EN
Year
Volume
80
Issue
2
Pages
161-170
Physical description
Dates
published
1991-08
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv80z202kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.