Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

• Authors: T. Gregorkiewicz , H. Altink , C. Ammerlaan
• Languages of publication: EN

Abstracts

EN

The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, optically detected ENDOR and double ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.

Keywords

EN

61.16.Hn

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 2
• Pages: 161-170

Dates

published

1991-08

Contributors

author

T. Gregorkiewicz

• Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands

author

H. Altink

• Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands

author

C. Ammerlaan

• Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands

Identifiers

DOI

10.12693/APhysPolA.80.161