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1991 | 79 | 2-3 | 411-414
Article title

Photo-Effects in In/p-CuInSe_{2} Schottky-Type Junction

Content
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Languages of publication
EN
Abstracts
EN
The voltage-dependent photocurrent and the short-circuit photocurrent generated by the modulated light in the In/p-CuInSe_{2} junction were measured. The results suggest that the recombination of carriers occurs in the metal-semiconductor interface as well as in the recombination centres present in the space charge region of the junction. Both the interface recombination and the recombination in the centres can be modified by illumination of the junction.
Keywords
EN
Publisher

Year
Volume
79
Issue
2-3
Pages
411-414
Physical description
Dates
published
1991-02
received
1990-08-08
Contributors
author
  • Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź, Poland
  • Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv79z259kz
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