Photo-Effects in In/p-CuInSe_{2} Schottky-Type Junction

• Authors: A. Opanowicz , B. Kościelniak-Mucha
• Languages of publication: EN

Abstracts

EN

The voltage-dependent photocurrent and the short-circuit photocurrent generated by the modulated light in the In/p-CuInSe_{2} junction were measured. The results suggest that the recombination of carriers occurs in the metal-semiconductor interface as well as in the recombination centres present in the space charge region of the junction. Both the interface recombination and the recombination in the centres can be modified by illumination of the junction.

Keywords

EN

73.40.Qv; 72.40.+w

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 79
• Issue: 2-3
• Pages: 411-414

Dates

published

1991-02

received

1990-08-08

Contributors

author

A. Opanowicz

• Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź, Poland

author

B. Kościelniak-Mucha

• Institute of Physics, Technical University of Łódź, Wólczańska 219, 93-005 Łódź, Poland