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2017 | 132 | 2 | 360-363
Article title

In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper

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EN
Abstracts
EN
We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
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EN
Contributors
author
  • Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland
  • Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland
References
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv132n2p40kz
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