In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper

• Authors: J. Binder , R. Stępniewski , W. Strupiński , A. Wysmołek
• Languages of publication: EN

Abstracts

EN

We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².

Keywords

EN

68.65.Pq; 78.67.Wj; 73.30.+y

Discipline

• 78.67.Wj: Optical properties of graphene
• 68.65.Pq: Graphene films
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2017
• Volume: 132
• Issue: 2
• Pages: 360-363

Dates

published

2017-08

Contributors

author

J. Binder

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

R. Stępniewski

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Wysmołek

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.132.360