Journal
Article title
Title variants
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Abstracts
Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
Discipline
- 42.79.Pw: Imaging detectors and sensors(see also 85.60.Gz Photodetectors)
- 85.30.Tv: Field effect devices
- 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)
Journal
Year
Volume
Issue
Pages
1193-1195
Physical description
Dates
published
2016-11
Contributors
author
- Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland
author
- Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland
author
- Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland
author
- Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland
author
- Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland
author
- Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland
author
- Institute of Radioelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland
References
- [1] D. Coquillat, J. Marczewski, P. Kopyt, N. Dyakonova, B. Giffard, W. Knap, Opt. Express 24, 272 (2016), doi: 10.1364/OE.24.000272
- [2] M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, W. Knap, J. Appl. Phys. 110, 054512 (2011), doi: 10.1063/1.3632058
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv130n509kz