An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors

• Authors: K. Kucharski , P. Zagrajek , D. Tomaszewski , A. Panas , G. Głuszko , J. Marczewski , P. Kopyt
• Languages of publication: EN

Abstracts

EN

Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.

Keywords

EN

85.30.Tv; 85.60.Gz; 42.79.Pw

Discipline

• 42.79.Pw: Imaging detectors and sensors(see also 85.60.Gz Photodetectors)
• 85.30.Tv: Field effect devices
• 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2016
• Volume: 130
• Issue: 5
• Pages: 1193-1195

Dates

published

2016-11

Contributors

author

K. Kucharski

• Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland

author

P. Zagrajek

• Military University of Technology, S. Kaliskiego 2, 00-908 Warsaw, Poland

author

D. Tomaszewski

• Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland

author

A. Panas

• Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland

author

G. Głuszko

• Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland

author

J. Marczewski

• Instytut Technologii Elektronowej, L. Okulickiego 5E, 05-500 Piaseczno, Poland

author

P. Kopyt

• Institute of Radioelectronics, Nowowiejska 15/19, 00-665 Warsaw, Poland

References

• [1] D. Coquillat, J. Marczewski, P. Kopyt, N. Dyakonova, B. Giffard, W. Knap, Opt. Express 24, 272 (2016), doi: 10.1364/OE.24.000272
• [2] M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, W. Knap, J. Appl. Phys. 110, 054512 (2011), doi: 10.1063/1.3632058

Identifiers

DOI

10.12693/APhysPolA.130.1193