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2015 | 127 | 6 | 1680-1688
Article title

Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga_{1-x}Al_{x}P in Amorphous and Crystalline Phases

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EN
Abstracts
EN
A ternary semiconductor Ga_{1-x}Al_{x}P has been synthesized for the first time by hot implantation of aluminum in GaP. Two mixed crystals of various compositions have been synthesized when implanting by two different fluencies of aluminum ions. The identification of the above mentioned mixed semiconductors in the amorphous as well as in the crystalline phases has been carried out by the laser Raman spectroscopy. The synthesis of the ternary compositions has been carried out at different depths from the substrate surface by implantation of aluminum ions of various energies. Ga_{1-x}Al_{x}P synthesized by the ion implantation shows the behavior of two-mode mixed semiconductors. The synthesized compounds are defective and the Raman spectra prove the fact. The share of disordered structure of the composition synthesized with high fluencies of aluminum ion implantation, 2.5 × 10^{17} ion/cm^2, is especially big.
Keywords
EN
Publisher

Year
Volume
127
Issue
6
Pages
1680-1688
Physical description
Dates
published
2015-06
received
2014-12-11
(unknown)
2015-05-02
Contributors
author
  • Ivane Javakhishvili Tbilisi State University, R. Agladze Institute of Inorganic Chemistry and Electrochemistry, Mindeli str. 11, 0186, Tbilisi, Georgia
author
  • Ivane Javakhishvili Tbilisi State University, R. Agladze Institute of Inorganic Chemistry and Electrochemistry, Mindeli str. 11, 0186, Tbilisi, Georgia
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n621kz
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