Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga_{1-x}Al_{x}P in Amorphous and Crystalline Phases

• Authors: S. Gotoshia , L. Gotoshia
• Languages of publication: EN

Abstracts

EN

A ternary semiconductor Ga_{1-x}Al_{x}P has been synthesized for the first time by hot implantation of aluminum in GaP. Two mixed crystals of various compositions have been synthesized when implanting by two different fluencies of aluminum ions. The identification of the above mentioned mixed semiconductors in the amorphous as well as in the crystalline phases has been carried out by the laser Raman spectroscopy. The synthesis of the ternary compositions has been carried out at different depths from the substrate surface by implantation of aluminum ions of various energies. Ga_{1-x}Al_{x}P synthesized by the ion implantation shows the behavior of two-mode mixed semiconductors. The synthesized compounds are defective and the Raman spectra prove the fact. The share of disordered structure of the composition synthesized with high fluencies of aluminum ion implantation, 2.5 × 10^{17} ion/cm^2, is especially big.

Keywords

EN

78.30.Fs; 78.40.Pg

Discipline

• 78.40.Pg: Disordered solids
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 6
• Pages: 1680-1688

Dates

published

2015-06

received

2014-12-11

(unknown)

2015-05-02

Contributors

author

S. Gotoshia

• Ivane Javakhishvili Tbilisi State University, R. Agladze Institute of Inorganic Chemistry and Electrochemistry, Mindeli str. 11, 0186, Tbilisi, Georgia

author

L. Gotoshia

• Ivane Javakhishvili Tbilisi State University, R. Agladze Institute of Inorganic Chemistry and Electrochemistry, Mindeli str. 11, 0186, Tbilisi, Georgia

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Identifiers

DOI

10.12693/APhysPolA.127.1680