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2014 | 126 | 5 | 1149-1153
Article title

Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures

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EN
Abstracts
EN
Using a multiband k·p theory the band structure properties of type-II W-design AlSb/InAs/GaInSb/InAs/AlSb quantum wells on GaSb substrates of various crystallographic orientations have been investigated. Such structures are predicted for the emission in a broad range of mid infrared from below 3 μm to beyond 10 μm. The energy of the fundamental optical transition and the corresponding oscillator strength have been determined in function of the layer structure details and versus the substrate orientation. In addition, the resulting optical anisotropy in such type-II quantum wells has been derived.
Keywords
EN
Year
Volume
126
Issue
5
Pages
1149-1153
Physical description
Dates
published
2014-11
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n528kz
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