Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures

• Authors: K. Ryczko
• Languages of publication: EN

Abstracts

EN

Using a multiband k·p theory the band structure properties of type-II W-design AlSb/InAs/GaInSb/InAs/AlSb quantum wells on GaSb substrates of various crystallographic orientations have been investigated. Such structures are predicted for the emission in a broad range of mid infrared from below 3 μm to beyond 10 μm. The energy of the fundamental optical transition and the corresponding oscillator strength have been determined in function of the layer structure details and versus the substrate orientation. In addition, the resulting optical anisotropy in such type-II quantum wells has been derived.

Keywords

EN

73.21.Fg; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 73.21.Fg: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1149-1153

Dates

published

2014-11

Contributors

author

K. Ryczko

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

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Identifiers

DOI

10.12693/APhysPolA.126.1149