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Article title
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Abstracts
In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.
Discipline
- 72.80.Vp: Electronic transport in graphene
- 78.67.Wj: Optical properties of graphene
- 81.05.ue: Graphene(for structure of graphene, see 61.48.Gh; for phonons in graphene, see 63.22.Rc; for thermal properties, see 65.80.Ck; for graphene films, see 68.65.Pq; for electronic transport, see 72.80.Vp; for electronic structure, see 73.22.Pr; for optical properties, see 78.67.Wj)
- 72.10.Fk: Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
Journal
Year
Volume
Issue
Pages
1087-1089
Physical description
Dates
published
2014-11
Contributors
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Faculty of Physics, University of Warsaw, Warszawa, Poland
author
- Institute of Electronic Materials Technology, Warszawa, Poland
author
- Institute of Electronic Materials Technology, Warszawa, Poland
- Institute of Optoelectronics, Military University of Technology, Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, Warszawa, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n508kz