Optical and Electrical Studies of Graphene Deposited on GaN Nanowires

• Authors: J. Kierdaszuk , P. Kaźmierczak , A. Drabińska , A. Wysmołek , K. Korona , M. Kamińska , K. Pakuła , I. Pasternak , A. Krajewska , Z. Żytkiewicz
• Languages of publication: EN

Abstracts

EN

In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.

Keywords

EN

81.05.ue; 72.10.Fk; 78.67.Wj; 72.80.Vp

Discipline

• 72.80.Vp: Electronic transport in graphene
• 78.67.Wj: Optical properties of graphene
• 81.05.ue: Graphene(for structure of graphene, see 61.48.Gh; for phonons in graphene, see 63.22.Rc; for thermal properties, see 65.80.Ck; for graphene films, see 68.65.Pq; for electronic transport, see 72.80.Vp; for electronic structure, see 73.22.Pr; for optical properties, see 78.67.Wj)
• 72.10.Fk: Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1087-1089

Dates

published

2014-11

Contributors

author

J. Kierdaszuk

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

P. Kaźmierczak

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

A. Drabińska

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

A. Wysmołek

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

K. Korona

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

M. Kamińska

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

K. Pakuła

• Faculty of Physics, University of Warsaw, Warszawa, Poland

author

I. Pasternak

• Institute of Electronic Materials Technology, Warszawa, Poland

author

A. Krajewska

• Institute of Electronic Materials Technology, Warszawa, Poland
• Institute of Optoelectronics, Military University of Technology, Warszawa, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Warszawa, Poland

References

• [1] H. Schmidt, H. Flügge, T. Winkler, T. Bülow, T. Riedl, W. Kowalsky, Appl. Phys. Lett. 94, 243302 (2009), doi: 10.1063/1.3154556
• [2] H. Kim, C.M. Gilmore, A. Piqué, J.S. Horwitz, H. Mattoussi, H. Murata, Z.H. Kafafi, D.B. Chrisey, J. Appl. Phys. 86, 6451 (1999), doi: 10.1063/1.371708
• [3] R.R. Nair, P. Blake, A.N. Grigorenko, K.S. Novoselov, T.J. Booth, T. Stauber, N.M.R. Peres, A.K. Geim, Science 320, 1308 (2008), doi: 10.1126/science.1156965
• [4] C. Lee, X. Wei, J.W. Kysar, J. Hone, Science 321, 385 (2008), doi: 10.1126/science.1157996
• [5] A.A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C.N. Lau, Nano Lett. 8, 902 (2008), doi: 10.1021/nl0731872
• [6] S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, D.C. Elias, J.A. Jaszczak, A.K. Geim, Phys. Rev. Lett. 100, 016602 (2008), doi: 10.1103/PhysRevLett.100.016602
• [7] P. Krogstrup, H.I. Jorgensen, M. Heiss, O. Demichel, J.V. Holm, M. Aagesen, J. Nygard, A. Fontcuberta i Morral, Nature Photon 7, 306 (2013), doi: 10.1038/nphoton.2013.32
• [8] A. Wierzbicka, Z.R. Zytkiewicz, S. Kret, J. Borysiuk, P. Dluzewski, M. Sobanska, K. Klosek, A. Reszka, G. Tchutchulashvili, A. Cabaj, E. Lusakowska, Nanotechnology 24, 035703 (2013), doi: 10.1088/0957-4484/24/3/035703
• [9] T. Ciuk, I. Pasternak, A. Krajewska, J. Sobieski, P. Caban, J. Szmidt, W. Strupinski, J. Phys. Chem. C 117, 20833 (2013), doi: 10.1021/nl200714q
• [10] I. Pasternak, A. Krajewska, K. Grodecki, I. Jozwik-Biala, K. Sobczak, W. Strupinski, AIP Adv. 4, 097133 (2014), doi: 10.1063/1.4896411
• [11] A. Drabinska, A. Wolos, M. Kaminska, W. Strupinski, J.M. Baranowski, Phys. Rev. B 86, 045421 (2012), doi: 10.1103/PhysRevB.86.115109
• [12] E. McCann, K. Kechedzhi, V.I. Fal'ko, H. Suzuura, T. Ando, B.L. Altshuler, Phys. Rev. Lett. 97, 146805 (2006), doi: 10.1103/PhysRevLett.97.146805
• [13] A. Eckmann, A. Felten, A. Mishchenko, L. Britnell, R. Krupke, K.S. Novoselov, C. Casiraghi, Nano Lett. 12, 3925 (2012), doi: 10.1021/nl300901a
• [14] F. Tuinstra, L. Koenig, J. Chem. Phys. 53, 1126 (1970), doi: 10.1063/1.1674108
• [15] L.G. Cançado, A. Jorio, E.H. Martins Ferreira, F. Stavale, C.A. Achete, R.B. Capaz, M.V.O. Moutinho, A. Lombardo, T. Kulmala, A.C. Ferrari, Nano Lett. 11, 3190 (2011), doi: 10.1021/nl201432g

Identifiers

DOI

10.12693/APhysPolA.126.1087